PART |
Description |
Maker |
APT10088HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 11A 0.880 Ohm
|
Advanced Power Technology Ltd.
|
APT1001R1BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 11A 1.100 Ohm
|
Advanced Power Technolo... ADPOW[Advanced Power Technology]
|
APT10050LVR 10050LVR |
POWER MOS V 1000V 21A 0.500 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT10086BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 13A 0.860 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT10040B2VR APT10040LVR |
POWER MOS V 1000V 25A 0.400 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd. Advanced Power Technology, Ltd.
|
APT10050JLC |
POWER MOS VI 1000V 19A 0.500 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology Ltd.
|
RJK6013DPE RJK6013DPE-00J3 RJK6013DPE12 RJK6013DPE |
600V - 11A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RFSP5032RS32Q1 RFSP5032RS32P0 |
5 GHz 802.11a WLAN Power Amplifier 5频段802.11a WLAN功率放大
|
ANADIGICS, Inc.
|
APT10030L2VFR |
POWER MOS V 1000V 33A 0.300 Ohm
|
Advanced Power Technology
|
APT10050JN |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV 1000V 20.5A 0.50 Ohm
|
Advanced Power Technology
|
APL1001J |
POWER MOS IV 1000V 18.0A 0.60 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
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